SIMULASI DAN ANALISIS PERPINDAHAN MUATAN PADA BURIED-CHANNEL CHARGE COUPLED DEVICE (BCCD)
DOI:
https://doi.org/10.70746/jstunsada.v2i2.379Keywords:
teknologi Mikro elektronik, MOS, Channel, Medan listrik, Transfer muatanAbstract
Dalam penelitian ini dirancang suatu struktur CCD jenis buried channel (BCCD) 3 gate, menggunakan bahan silicon dengan gate dari bahan aluminium, yang dianalisis dan disimulasikan pada program perangkat lunak MATLAB. Hasil simulasi dan analisis menunjukkan bahwa perpindahan muatan medan elektrik yang ditimbulkan oleh fringing field lebih efisien dari pada perpindahan muatan yang ditimbulkan oleh self-induced drift, dan thermal diffusion.
References
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2. Howes, M.J and Morgan, D.V.,” Charge-coupled Device and System”, John Willey &Sons, 1998
3. Neamen,D.,” Semiconductor Physics and Dev.Basic Principles”, Richard DI,Inc.,USA, 1992.
4. Pall,B.B;and Nelson,S.S,”Optoelectronic Charge Coupled Device (OECCD) using InP MIS Capacitor Array”, IEEE Trans.Elect.Dev.,vol40,pp.1878-1880, 1993.
5. Rio, dan M.Lida, “Fisika dan teknologi Semikonduktor”, Ass.For Int.Technical Promotion, Tokyo, Japan, 1980
6. Sze.S.M.” Physics of Semiconductor Devices”, 2ndED,John willey Sons.Inc.Canada,1997.
7. Sze, S.M.,”Semiconductor Devices:Physics and Technology”, John Wiley&Son,Inc,Canada, 2001.
8. Yang,E.S., “Microelectronics Devices” , McGraw-Hill, Singapore, 2008.
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Published
2012-09-15
How to Cite
Suryani, N. (2012). SIMULASI DAN ANALISIS PERPINDAHAN MUATAN PADA BURIED-CHANNEL CHARGE COUPLED DEVICE (BCCD). Jurnal Sains & Teknologi Fakultas Teknik Universitas Darma Persada, 2(2), 32–39. https://doi.org/10.70746/jstunsada.v2i2.379
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